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High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data
IXTA 1N80 IXTP 1N80 IXTY 1N80
VDSS ID25
RDS(on)
= 800 V = 750 mA = 11
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM
Maximum Ratings 800 800 20 30 750 3 1.0 V V V V mA A A mJ mJ V/ns W C C C
TO-220AB (IXTP)
GD S
D (TAB)
TO-263 AA (IXTA)
TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 47 TC = 25C
5 100 3 40 -55 ... +150 150 -55 ... +150
G S D (TAB)
TO-252 AA (IXTY)
G S
D (TAB)
Mounting torque TO-220 TO-252 TO-263
1.13/10 Nm/lb.in. 4 0.8 3 300 g g g C
G = Gate, S = Source,
D = Drain, TAB = Drain
Features
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions
! International standard packages ! High voltage, Low RDS (on) HDMOSTM
process
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 800 2.5 4.5 100 TJ = 25C TJ = 125C 9.5 25 500 11 V V nA A A
! Rugged polysilicon gate ! Fast switching times
Applications
cell structure
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 A VDS = VGS, ID = 25 A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
! Switch-mode
! ! DC choppers ! High frequency
Advantages
and resonant-mode power supplies Flyback inverters matching
VGS = 10 V, ID = 500 mA Pulse test, t 300 s, duty cycle d 2 %
! Space savings ! High power density
DS98822C(11/03)
(c) 2003 IXYS All rights reserved
IXTP 1N80 IXTA 1N80 IXTY 1N80
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 0.7 0.8 220 VGS = 0 V, VDS = 25 V, f = 1 MHz 23 4 11 VGS = 10 V, VDS = 0.5 * VDSS, ID = 1A RG = 47, (External) 19 40 28 8.5 VGS = 10 V, VDS = 0.5 * VDSS, ID = 1A 2.5 4.5 3.1 (IXTP) 0.50 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side
TO-220 AD Dimensions
gfs Ciss Coss Crss td(on) tr td(off) tf QG(on) QGS QGD RthJC RthCK
VDS = 20 V; ID = 500 mA, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 750 3 1.8 710 2 mA A V ns TO-263 AA Outline
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V TO-252 AA Outline
Dim. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 Millimeter Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.89 1.27 2.54 2.92 Inches Min. Max. 0.086 0.094 0.035 0.045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.250 0.265 0.170 0.205 0.090 BSC 0.180 BSC 0.370 0.410 0.020 0.040 0.025 0.040 0.035 0.050 0.100 0.115
1. 2. 3. 4.
Gate Drain Source Drain Bottom Side
Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R
Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74
Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1

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